“Researchers have developed a new type of transistor that they say could ‘change the world of electronics’ within the next two decades.

The new transistor is built using an ultrathin material created from stacked, parallel layers of boron nitride, which researchers claim can switch between positive and negative charges in nanoseconds and withstand over 100 billion cycles without wearing down.

This makes it ideal not only for high-speed, energy-efficient electronic devices, but also for denser memory storage. Because boron nitride is so thin — and because the voltage needed for switching polarization scales with thickness — transistors made from this material would have remarkably low power demands.”

From Live Science.